Mechanism for increasing dopant incorporation in semiconductors via doped nanostructures
نویسندگان
چکیده
Igor L. Kuskovsky,1,2,* Y. Gu,2,† Y. Gong,2 H. F. Yan,2 J. Lau,2,4 I. C. Noyan,2 G. F. Neumark,2 O. Maksimov,3 X. Zhou,3 M. C. Tamargo,3 V. Volkov,4 Y. Zhu,4 and L. Wang5 1Department of Physics, Queens College of CUNY, Flushing, New York 11367, USA 2Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA 3Department of Chemistry, City College of CUNY, New York, New York 10036, USA 4Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973, USA 5Charles Evans & Associates, 810 Kifer, Sunnyvale, California 94086, USA Received 22 February 2006; revised manuscript received 6 April 2006; published 8 May 2006
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